A multi-ion beam sputtering technique can be used to successfully fabricate ferroelectric lead zirconate titanate (PZT). This technique is very advantageous as the current and voltage of the ion beam can be tuned, allowing control of the flux density and energy of the sprayed materials. This technique also offers lower operating pressures during deposition, controllable deposition, and exceptional uniformity over larger areas, reproducibility, and localized plasma within an ion source. Ion beam sputtering is an excellent growth technique and has been widely used to deposit oxide and semiconductor films. But this method has mainly been used to deposit oxides of single elements and not multi-element compounds such as ferroelectrics such as PZT. This is most likely due to the lack of uniformity, reproducibility, and control of stoichiometry with the deposition of multielementary compounds. An experiment was conducted at the Materials Research Laboratory, at Pennsylvania State University, University Park, using a multi-ion beam technique to deposit PZT onto various unheated substrates. A multi-ion beam sputtering system was used in the experiment to sputter PZT from separate metals of Pb, Zr and Ti. This system provides uniformity over large areas and control over stoichiometry as PZT has been broken down into individual elemental compounds. In the experiment the three metal targets, Pb, Zr and Ti, were placed on adjustable brackets. The brackets were designed to be flexible and adjustable so they can be positioned in any position relative to the ion beam. Three primary ion sources were focused and adjusted to the objectives. The targets were placed at a distance of approximately 11–16 cm from the ion source and a shutter was placed in the center of the paper, but when the annealing time reached 20 s, the films retained a pure perovskite phase. The conventional furnace annealing process produced a mixture of pyrochlore and perovskite crystals at 600°C with an annealing time of 2 hours. When the PZT films were annealed at 650 °C for 2 h, all films assumed pure perovskite crystalline structures. The Pb content also had an effect on the crystallization of the PZT film. It was determined that excess PZT increased crystallization toward the perovskite phase. Although excess Pb increases crystallization, it worsens its morphology. PZT films deposited with excess Pb tend to have a rougher surface. Works Cited Reactive multi-ion beam sputtering deposition of Pb(Zr,Ti) O3 ferroelectric thin films SB Krupanidhi, H. Hu and V. KumarMaterials Research Laboratory, Pennsylvania State University, University Park, Pennsylvania 16802